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LH28F400SU-NC Datasheet(PDF) 9 Page - Sharp Corporation |
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LH28F400SU-NC Datasheet(HTML) 9 Page - Sharp Corporation |
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9 / 35 page  4M (512K × 8, 256K × 16) Flash Memory LH28F400SU-NC 9 WSMS ESS ES DWS VPPS R R R 765 43 2 1 0 Compatible Status Register CSR.7 = WRITE STATE MACHINE STATUS (WSMS) 1 = Ready 0 = Busy CSR.6 = ERASE-SUSPEND STATUS (ESS) 1 = Erase Suspended 0 = Erase in Progress/Completed CSR.5 = ERASE STATUS (ES) 1 = Error in Block Erasure 0 = Successful Block Erase CSR.4 = DATA-WRITE STATUS (DWS) 1 = Error in Data Write 0 = Data Write Successful CSR.3 = VPP STATUS (VPPS) 1 = VPP Low Detect, Operation Abort 0 = VPP OK NOTES: 1. RY »/BY » output or WSMS bit must be checked to determine completion of an operation (Erase Suspend, Erase or Data Write) before the appropriate Status bit (ESS, ES or DWS) is checked for success. 2. If DWS and ES are set to ‘1’ during an erase attempt, an improper command sequence was entered. Clear the CSR and attempt the operation again. 3. The VPPS bit, unlike an A/D converter, does not provide continuous indication of VPP level. The WSM interrogates VPP’s level only after the Data-Write or Erase command sequences have been entered, and informs the system if VPP has not been switched on. VPPS is not guaranteed to report accurate feedback between VPPL and VPPH. 4. CSR.2 - CSR.0 = Reserved for further enhancements. These bits are reserved for future use and should be masked out when polling the CSR. 4M FLASH MEMORY SOFTWARE ALGORITHMS Overview With the advanced Command User Interface, its Per- formance Enhancement commands and Status Regis- ters, the software code required to perform a given operation may become more intensive but it will result in much higher write/erase performance compared with current flash memory architectures. The software flowcharts describing how a given op- eration proceeds are shown here. Figures 4 through 6 depict flowcharts using the 2nd generation flash device in the LH28F008SA-compatible mode. Figures 7 through 12 depict flowcharts using the 2nd generation flash device’s performance enhancement commands mode. When the device power-up or the device is reset by RP » pin, all blocks come up locked. Therefore, Word/ Byte Write, Two Byte Serial Write and Block Erase can not be performed in each block. However, at that time, Erase All Unlocked Block is performed normally, if used, and reflect actual lock status, also the unlocked block data is erased. When the device power-up or the device is reset by RP » pin, Set Write Protect command must be written to reflect actual block lock status. Reset Write Protect command must be written be- fore Write Block Lock command. To reflect actual block lock status, Set Write Protect command is succeeded. The Compatible Status Register (CSR) is used to determine which blocks are locked. In order to see Lock Status of a certain block, a Word/Byte Write command (WA = Block Address, WD = FHH) is written to the CUI, after issuing Set Write Protect command. If CSR.7, CSR.5 and CSR.4 (WSMS, ES and DWS) are set to '1’s, the block is locked. If CSR.7 is set to '1', the block is not locked. Reset Write Protect command enables Write/Erase operation to each block. In the case of Block Erase is performed, the block lock information is also erased. Block Lock command and Set Write Protect command must be written to pro- hibit Write/Erase operation to each block. There are unassigned commands. It is not recom- mended that the customer use any command other than the valid commands specified in “Command Bus Defi- nitions”. Sharp reserved the right to redefine these codes for future functions. Please do not execute reprogramming 0 for the bit which has already been programmed 0. Overwrite op- eration may generate unerasable bit. In case of repro- gramming 0 to the Byte data which has been pro- grammed 1. • Program 0 for the bit in which you want to change data from 1 to 0. • Program 1 for the bit which has already been pro- grammed 0. For example, changing Byte data from 10111101 to 10111100 requires 11111110 programming. |
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