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RB162L-60 Datasheet(PDF) 1 Page - Rohm |
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RB162L-60 Datasheet(HTML) 1 Page - Rohm |
1 / 4 page Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB162L-60 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification Features 1) Small power mold type. (PMDS) 2) High switching speed 3) Low forward voltage Construction Structure Silicon epitaxial planer Taping dimensions (Unit : mm) Absolute maximum ratings (Tl=25 C) Symbol VRM VR Tj Tstg Electrical characteristics (Tj=25 C) Symbol Unit VF V IR μA Storage temperature 40 to 150 C Conditions Junction temperature 150 C Repetitive peak reverse voltage D 0.5 60 V A one cycle peak value, Tj=25 C Parameter Conditions Limits Unit Forward current surge peak IFSM 60Hz half sin wave, Non-repetitive 20 A Glass epoxy substrate mounted Reverse voltage Direct voltage 60 V Average rectified forward current Io 1.0 R-road, 60Hz half sin wave Reverse current - 4 100 IF=1.0A VR=60V Max. Forward voltage - 0.54 0.65 Parameter Min. Typ. PMDS 2.0 4.0±0.1 2.9±0.1 4.0±0.1 2.0±0.05 φ1.55±0.05 φ1.55 0.3 2.8MAX 1/3 2011.04 - Rev.A |
Similar Part No. - RB162L-60_11 |
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Similar Description - RB162L-60_11 |
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