SPW47N65C3 datasheet(1/11 Pages) INFINEON

Part #	SPW47N65C3

Description	CoolMOSTM Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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SPW47N65C3

CoolMOS

TM Power Transistor

Features

• Worldwide best R ds,on in TO247

• Low gate charge

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

1) for target applications

• Pb-free lead plating; RoHS compliant

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

A

T C=100 °C

Pulsed drain current

2)

I D,pulse

T C=25 °C

Avalanche energy, single pulse

E AS

I D=3.5 A, V DD=50 V

1800

mJ

Avalanche energy, repetitive t AR

2),3)

E AR

I D=7 A, V DD=50 V

Avalanche current, repetitive t AR

2),3)

I AR

A

MOSFET dv /dt ruggedness

dv /dt

V DS=0...480 V

V/ns

Gate source voltage

V GS

static

V

AC (f >1 Hz)

Power dissipation

P tot

T C=25 °C

W

Operating and storage temperature

T j, T stg

°C

Mounting torque

M3 and M3.5 screws

60

Ncm

±30

415

-55 ... 150

1

7

50

±20

Value

47

30

141

V DS

650

V

R DS(on),max

0.07

Ω

Q g,typ

255

nC

Product Summary

PG-TO247-3-1

Type

Package

SPW47N65C3

PG-TO247-3-1

Marking

47N65C3

Rev. 1.

2

page 1

200

8-02-12

Please note the new package dimensions arccording to PCN 2009-134-A

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