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BR25H040-WC Datasheet(PDF) 2 Page - Rohm |
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BR25H040-WC Datasheet(HTML) 2 Page - Rohm |
2 / 20 page Technical Note BR25H□□□-WC series 2/19 www.rohm.com 2010.08 - Rev.D © 2010 ROHM Co., Ltd. All rights reserved. ● Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Impressed voltage VCC -0.3~+6.5 V Permissible dissipation Pd 560(SOP8) *1 mW 560(SOP-J8) *2 410(TSSOP-B8) *3 Storage temperature range Tstg -65~+150 °C Operating temperature range Topr -40~+125 °C Terminal voltage - -0.3~VCC+0.3 V ・ When using at Ta=25℃ or higher, 4.5mW (*1,*2), 3.3mW(*3) to be reduced per 1℃ ● Memory cell characteristics (VCC=2.5V~5.5V) Parameter Limits Unit Condition Min. Typ. Max. Number of data rewrite times *1 1,000,000 - - Times Ta≤85°C 500,000 - - Times Ta≤105°C 300,000 - - Times Ta≤125°C Data hold years *1 40 - - Years Ta≤25°C 20 - - Years Ta≤85°C *1:Not 100% TESTED ● Recommended action conditions Parameter Symbol Limits Unit Power source voltage VCC 2.5~5.5 V Input voltage Vin 0~VCC ● Input / output capacity (Ta=25°C, frequency=5MHz) Parameter Symbol Conditions Min Max Unit Input capacity *1 CIN VIN=GND - 8 pF Output capacity *1 COUT VOUT=GND - 8 *1: Not 100% TESTED |
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