DE375-501N21A

RF Power MOSFET

Symbol

Test Conditions

Characteristic Values

min.

typ.

max.

0.3

Ω

2500

pF

f = 1 MHz

170

pF

46

pF

Back Metal to any Pin

33

pF

5

ns

3

ns

5

ns

8

ns

70

nC

18

nC

40

nC

Source-Drain Diode

Characteristic Values

Symbol

Test Conditions

min.

typ.

max.

21

A

150

A

1.5

V

200

ns

Pulse test, t ≤ 300 µs, duty cycle ≤ 2%

0.6

µC

15

A

IXYS RF reserves the right to change limits, test conditions and dimensions.

IXYS RF MOSFETS are covered by one or more of the following U.S. patents:

4,835,592

4,860,072

4,881,106

4,891,686

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715

5,381,025

5,640,045

For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical

note on the IXYSRF web site at;

http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf

CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.

Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-

lished in this document at any time and without notice.