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BD8165MUV Datasheet(PDF) 4 Page - Rohm |
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BD8165MUV Datasheet(HTML) 4 Page - Rohm |
4 / 5 page 4/4 REV. D Operation Notes 1. Absolute maximum range This product are produced with strict quality control, but might be destroyed in using beyond absolute maximum ratings. Open IC destroyed a failure mode cannot be defined (like Short mode, or Open mode). Therefore physical security countermeasure, like fuse, is to be given when a specified mode to be beyond absolute maximum ratings is considered. 2. Ground potential GND terminal should be a lowest voltage potential every state. Please make sure all pins which is over ground even if include transient feature. 3. Setting of heat Use a setting of heat that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.. 4 . Short Circuit between Terminal and Soldering Don’t short-circuit between Output pin and the power supply pin, Output pin and GND pin, or the power supply pin and GND pin.When soldering the IC on circuit board, please be unusually cautious about the orientation and the position of the IC. When the orientation is mistaken the IC may be destroyed. 5 . Electromagnetic Field Mal-function may happen when the device is used in the strong electromagnetic field. 6. Ground wiring patterns When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing a single ground point at the application's reference point so that the pattern wiring resistance and voltage variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND wiring patterns of any external components. 7. This IC is a monolithic IC which has P+ isolation in the P substrate and between the various pins. A P-N junction is formed from this P layer and the N layer of each pin. For example, when a resistor and a transistor is connected to a pin. Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits as well as operation faults and physical damage. Accordingly, you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin. 8. Over current protection circuit The over-current protection circuits are built in at output, according to their respective current outputs and prevent the IC from being damaged when the load is short-circuited or over-current. But, these protection circuits are effective for preventing destruction by unexpected accident. When it’s in continuous protection circuit moving period don’t use please. And for ability, because this chip has minus characteristic, be careful for heat plan. 9. Built-in thermal circuit A temperature control circuit is built in the IC to prevent the damage due to overheat. Therefore, all the outputs are turned off when the thermal circuit works and are turned on when the temperature goes down to the specified level. 10.Testing on application boards When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress. Always discharge capacitors after each process or step. Ground the IC during assembly steps as an antistatic measure, and use similar caution when transporting or storing the IC. Always turn the IC's power supply off before connecting it to or removing it from a jig or fixture during the inspection process. 11.Discontiguous mode The DC/DC converters of this IC are designed for being used in contiguous current mode, normally. The special consideration on adjusting the inductance or the resistive output load to avoid the discontiguous current mode should be properly done. N P+ P+ parasitic diode resister (PinA) (PinB) parasitic diode or transistor GND Psubstrate N P N N P+ P+ B N E C GND GND (PinA) Parasitic diode GND (PinB) B C E near-by other element parasitic diode or transistor SIMPLIFIED STRUCTURE OF BI-POLAR IC |
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