8

FN6095.4

October 28, 2010

Virtually all the analog leakage current comes from the ESD

diodes to V+ or GND. Although the ESD diodes on a given

signal pin are identical and therefore fairly well balanced,

they are reverse biased differently. Each is biased by either

V+ or GND and the analog signal. This means their leakages

will vary as the signal varies. The difference in the two diode

leakages to the V+ and GND pins constitutes the analog-

signal-path leakage current. All analog leakage current flows

between each pin and one of the supply terminals, not to the

other switch terminal. This is why both sides of a given

switch can show leakage currents of the same or opposite

polarity. There is no connection between the analog signal

paths and V+ or GND.

FIGURE 8. ON-RESISTANCE vs SUPPLY VOLTAGE vs

SWITCH VOLTAGE

FIGURE 9. ON-RESISTANCE vs SWITCH VOLTAGE

FIGURE 10. ON-RESISTANCE vs SWITCH VOLTAGE

FIGURE 11. CHARGE INJECTION vs SWITCH VOLTAGE

01

2

3

4

0.35

0.40

0.45

0.50

0.55

0.60

0.65

0.70

0.75

V+ = 3V

V+ = 2.7V

V+ = 1.8V

V+ = 3.6V

V+ = 1.65V

0.30

0.35

0.40

0.45

0.50

0.55

0

0.5

1.0

1.5

2.0

2.5

3.0

+25°C

+85°C

-40°C

V+ = 3V

0

0.5

1.0

1.5

2.0

0.30

0.35

0.40

0.45

0.50

0.55

0.60

0.65

0.70

+85

°C

-40

°C

+25

°C

V+ = 1.8V

0

0.5

1.0

1.5

2.0

2.5

3.0

-120

-110

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

V+ = 1.8V

V+ = 3V

ISL84781