DMN2300UFB

Document number: DS35235 Rev. 1 - 2

2 of 6

www.diodes.com

May 2011

© Diodes Incorporated

A Product Line of

Diodes Incorporated

DMN2300UFB

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±8

V

Continuous Drain Current

Steady

State

1.32

0.94

1.78

A

Pulsed Drain Current (Note 6)

8

A

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 4)

0.468

W

Power Dissipation (Note 5)

1.2

W

Thermal Resistance, Junction to Ambient (Note 4)

267

°C/W

Thermal Resistance, Junction to Ambient (Note 5)

104

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

20

-

-

V

-

-

1

μA

Gate-Source Leakage

-

-

10

μA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.45

-

0.95

V

Static Drain-Source On-Resistance

-

-

175

m

Ω

-

-

240

-

-

360

Forward Transfer Admittance

40

-

-

mS

Diode Forward Voltage

-

0.7

1.2

V

DYNAMIC CHARACTERISTICS

Input Capacitance

-

67.62

-

pF

f = 1.0MHz

Output Capacitance

-

9.74

-

pF

Reverse Transfer Capacitance

-

7.58

-

pF

Gate Resistance

-

68.51

-

Ω

Total Gate Charge

-

0.89

-

nC

Gate-Source Charge

-

0.14

-

nC

Gate-Drain Charge

-

0.16

-

nC

Turn-On Delay Time

-

4.92

-

ns

Turn-On Rise Time

-

6.93

-

ns

Turn-Off Delay Time

-

21.71

-

ns

Turn-Off Fall Time

-

10.62

-

ns

Notes:

4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 25mm X 25mm square copper plate

6. Device mounted on minimum recommended pad layout test board, 10

μs pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.