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DMN2300UFB Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN2300UFB Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMN2300UFB Document number: DS35235 Rev. 1 - 2 2 of 6 www.diodes.com May 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300UFB Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current Steady State TA = 25°C (Note 4) TA = 85°C (Note 4) TA = 25°C (Note 5) ID 1.32 0.94 1.78 A Pulsed Drain Current (Note 6) IDM 8 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 4) PD 0.468 W Power Dissipation (Note 5) PD 1.2 W Thermal Resistance, Junction to Ambient (Note 4) RθJA 267 °C/W Thermal Resistance, Junction to Ambient (Note 5) RθJA 104 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 20 - - V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 1 μA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS - - 10 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 0.45 - 0.95 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - - 175 m Ω VGS = 4.5V, ID = 300mA - - 240 VGS = 2.5V, ID = 250mA - - 360 VGS = 1.8V, ID = 100mA Forward Transfer Admittance |Yfs| 40 - - mS VDS = 3V, ID = 30mA Diode Forward Voltage VSD - 0.7 1.2 V VGS = 0V, IS = 300mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss - 67.62 - pF VDS = 20V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 9.74 - pF Reverse Transfer Capacitance Crss - 7.58 - pF Gate Resistance Rg - 68.51 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg - 0.89 - nC VGS = 4.5V, VDS = 10V, ID = 1A Gate-Source Charge Qgs - 0.14 - nC Gate-Drain Charge Qgd - 0.16 - nC Turn-On Delay Time tD(on) - 4.92 - ns VDS = 10V, ID = 1A VGS = 4.5V, RG = 6Ω Turn-On Rise Time tr - 6.93 - ns Turn-Off Delay Time tD(off) - 21.71 - ns Turn-Off Fall Time tf - 10.62 - ns Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 25mm X 25mm square copper plate 6. Device mounted on minimum recommended pad layout test board, 10 μs pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. |
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