AP2401/AP2411

2.0A SINGLE CHANNEL CURRENT-LIMITED

POWER SWITCH WITH LATCH-OFF

AP2401/AP2411

Document number: DS35113 Rev. 3 - 2

4 of 15

www.diodes.com

June 2011

© Diodes Incorporated

Symbol

Parameter

Test Conditions (Note 3)

Min

Typ.

Max

Unit

Input UVLO

1.6

2.0

2.4

V

50

mV

Input Shutdown Current

Disabled, OUT = open

0.1

1

µA

Input Quiescent Current

Enabled, OUT = open

60

100

µA

Input Leakage Current

Disabled, OUT grounded

0.1

1

µA

Reverse Leakage Current

0.01

1

µA

Switch on-resistance

70

84

m

Ω

-40

105

90

108

-40

135

Over-Load Current Limit

(Note 3)

-40

2.0

2.5

2.85

A

Current limiting trigger threshold Output Current Slew rate (<100A/s)

2.5

A

Enabled into short circuit

2.1

2.75

3.3

A

ground)

2

µs

EN Input Logic Low Voltage

0.8

V

EN Input Logic High Voltage

2

V

0.01

1

µA

0.5

1

µA

0.1

ms

Output turn-on rise time

0.6

1.5

ms

0.1

ms

Output turn-off fall time

0.05

0.1

ms

FLG output FET on-resistance

20

40

Ω

FLG Off Current

0.01

1

µA

FLG blanking and latch off time

Assertion or deassertion due to overcurrent and

over-temperature condition

4

7

15

ms

Discharge time

0.6

ms

Discharge resistance (Note 4)

100

Ω

Thermal Shutdown Threshold

Enabled

140

°C

Thermal Shutdown Hysteresis

20

°C

Thermal Resistance Junction-to-

Ambient

SO-8 (Note 5)

96

°C/W

MSOP-8EP (Note 6)

92

°C/W

DFN3030-8 (Note 6)

84

°C/W

Notes:

3. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.

The discharge function offers a resistive discharge path for the external storage capacitor for limited time.

5. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.

6. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground

plane.