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HMC-ALH476 Datasheet(PDF) 8 Page - Hittite Microwave Corporation |
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HMC-ALH476 Datasheet(HTML) 8 Page - Hittite Microwave Corporation |
8 / 18 page For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 13 - 8 13 Pad Number Function Description Interface Schematic 14 TRGOUT Trigger out signal. Generates a HIGH (3.5V) signal when the active bias system stabilizes. This signal can be used to trigger next device (ENABLE) if more than one HMC981 is used in a daisy chain. 16, 17 VDRAIN Drain voltage. Should be connected to the supply terminal of the external amplifier. A minimum 100 nF capacitor has to be placed close to the external amplifier to improve load regulation. 18 VGATE Gate Control pad for external amplifier. Connect to the gate (base) of the external amplifier. In order to guarantee stability,a 10μF capacitor should be connected between the gate (base) terminal of the external amplifier and GND as close to the amplifier as possible. 21 VNEG Negative input to the chip. Should be supplied with CPOUT when negative voltage generator is enabled, or connect to external VSS when negative voltage generator is enabled. For detailed usage please refer to the “Negative Voltage Generator” section. 22 VNEGFB Feedback (Control) pad for Negative Voltage Generator Charge Pump. Float to activate the negative voltage generator / Sort to GND to disable the negative voltage generator. 24 VGATEFB Control pad for VGATEFB. Float VGATEFB when a depletion mode transistor is biased. Selects the mode of operation along with VNEGFB pad. For detailed usage please refer to the Table 2. 27, 28 CPOUT Negative voltage generator charge pump output. Negative voltage generator needs a flying capacitor, a reservoir capacitor and two diodes to operate. Please refer to the application schematic for more info. Pad Descriptions (Continued) HMC981 v00.0611 ACTIVE BIAS CONTROLLER |
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