MUN5211T1G datasheet(7/16 Pages) ONSEMI

Part #	MUN5211T1G

Description	Bias Resistor Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MUN5211T1G Series

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7

TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5212T1G

Figure 7. VCE(sat) versus IC

Figure 8. DC Current Gain

Figure 9. Output Capacitance

Figure 10. Output Current versus Input Voltage

1000

10

IC, COLLECTOR CURRENT (mA)

TA =75C

25C

--25C

100

10

1

100

75C

25C

100

0

Vin, INPUT VOLTAGE (VOLTS)

10

1

0.1

0.01

0.001

24

68

10

TA =--25C

0

IC, COLLECTOR CURRENT (mA)

100

TA =--25C

75C

10

1

0.1

10

20

30

40

50

25C

Figure 11. Input Voltage versus Output Current

0.001

TA =--25C

75C

25C

0.01

0.1

1

40

IC, COLLECTOR CURRENT (mA)

0

20

50

0

10

203040

4

3

2

1

0

VR, REVERSE BIAS VOLTAGE (VOLTS)

IC/IB =10

VCE =10 V

f=1MHz

IE =0 V

TA =25C

VO =5 V

VO =0.2 V

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