© Semiconductor Components Industries, LLC, 2008

September, 2008 − Rev. 13

1

Publication Order Number:

BDV65B/D

BDV65B(NPN),

BDV64B(PNP)

Complementary Silicon

Plastic Power Darlingtons

. . . for use as output devices in complementary general purpose

amplifier applications.

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector−Emitter Voltage

100

Vdc

Collector−Base Voltage

100

Vdc

Emitter−Base Voltage

5.0

Vdc

Collector Current

− Continuous

− Peak

10

20

Adc

Base Current

0.5

Adc

Derate above 25_C

125

1.0

W

W/_C

Operating and Storage Junction Temperature

Range

–65 to

+150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

1.0

_C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SOT−93

(TO−218)

CASE 340D

10 AMPERE DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−80−100−120 VOLTS,

125 WATTS

MARKING

DIAGRAM

http://onsemi.com

AYWW

BDV6xBG

A

= Assembly Location

Y

= Year

WW

= Work Week

G= Pb−Free Package

BDV6xB

= Device Code

x = 4 or 5

Device

Package

Shipping

ORDERING INFORMATION

BDV65B

SOT−93

30 Units / Rail

BDV65BG

SOT−93

(Pb−Free)

30 Units / Rail

BDV64B

SOT−93

30 Units / Rail

BDV64BG

SOT−93

(Pb−Free)

30 Units / Rail

COLLECTOR 2,4

BASE

1

EMITTER 3

COLLECTOR 2

BASE

1

EMITTER 3

NPN

PNP

BDV65B

BDV64B

3

2

1