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CY14B101LA-SP25XI Datasheet(PDF) 11 Page - Cypress Semiconductor

Part # CY14B101LA-SP25XI
Description  1 Mbit (128K x 8/64K x 16) nvSRAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY14B101LA-SP25XI Datasheet(HTML) 11 Page - Cypress Semiconductor

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CY14B101LA
CY14B101NA
Document #: 001-42879 Rev. *L
Page 11 of 28
AC Test Conditions
Input pulse levels ...................................................0 V to 3 V
Input rise and fall times (10%–90%) ........................... < 3 ns
Input and output timing reference levels ....................... 1.5 V
Data Retention and Endurance
Over the Operating Range
Parameter
Description
Min
Unit
DATAR
Data retention
20
Years
NVC
Nonvolatile STORE operations
1,000
K
Capacitance
Parameter[22]
Description
Test Conditions
Max
Unit
CIN
Input capacitance (except BHE, BLE and HSB)TA = 25 C, f = 1 MHz, VCC = VCC(Typ)
7pF
Input capacitance (for BHE, BLE and HSB)8
pF
COUT
Output capacitance (except HSB)
7
pF
Output capacitance (for HSB)
8
pF
Thermal Resistance
Parameter[22]
Description
Test Conditions
54-pin
TSOP II
48-pin
SSOP
48-ball
FBGA
44-pin
TSOP II
32-pin
SOIC
Unit
JA
Thermal resistance
(Junction to ambient)
Test conditions follow
standard test methods and
procedures for measuring
thermal impedance, in
accordance with
EIA/JESD51.
36.4
37.47
48.19
41.74
41.55
C/W
JC
Thermal resistance
(Junction to case)
10.13
24.71
6.5
11.90
24.43
C/W
AC Test Loads
Figure 5. AC Test Loads
3.0 V
OUTPUT
5 pF
R1
R2
789
3.0 V
OUTPUT
30 pF
R1
R2
789
for tristate specs
577
577
Note
22. These parameters are guaranteed by design and are not tested.
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