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2N6043G Datasheet(PDF) 4 Page - ON Semiconductor |
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2N6043G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 6 page PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 http://onsemi.com 4 20 1.0 Figure 5. Active-Region Safe Operating Area VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 5.0 2.0 1.0 0.02 2.0 3.0 7.0 50 100 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 70 TJ = 150°C dc 1.0ms 100 ms 0.5 0.2 0.05 5.0 2N6040, 2N6043 2N6045 0.1 10 20 30 500 ms 5.0ms CURVES APPLY BELOW RATED VCEO There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150 °C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 300 Figure 6. Small-Signal Current Gain VR, REVERSE VOLTAGE (VOLTS) 30 0.5 1.0 2.0 100 5.0 0.1 0.2 200 70 50 TJ = 25°C Cib 100 Cob PNP NPN 10,000 1.0 Figure 7. Capacitance f, FREQUENCY (kHz) 10 2.0 5.0 20 50 1000 100 10 10 20 5000 3000 2000 1000 500 300 200 100 50 30 20 200 500 PNP NPN TC = 25°C VCE = 4.0 Vdc IC = 3.0 Adc 50 20,000 0.1 Figure 8. DC Current Gain IC, COLLECTOR CURRENT (AMP) 200 0.2 0.3 0.5 1.0 2.0 10 0.7 7.0 PNP 2N6040, 2N6042 NPN 2N6043, 2N6045 10,000 TJ = 150°C 25 °C -55 °C IC, COLLECTOR CURRENT (AMP) VCE = 4.0 V TJ = 150°C 25 °C -55 °C 7000 5000 3000 2000 1000 700 500 300 3.0 5.0 VCE = 4.0 V 20,000 0.1 200 0.2 0.3 0.5 1.0 2.0 10 0.7 7.0 10,000 7000 5000 3000 2000 1000 700 500 300 3.0 5.0 |
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