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NUP4201MR6 Datasheet(PDF) 2 Page - ON Semiconductor |
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NUP4201MR6 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 9 page NUP4201MR6 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C Capacitance @ VR = 0 and f = 1.0 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. Uni−Directional TVS IPP IF V I IR IT VRWM VC VBR VF ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage VRWM (Note 2) 5.0 V Breakdown Voltage VBR IT=1 mA, (Note 3) 6.0 V Reverse Leakage Current IR VRWM = 5 V 5.0 mA Clamping Voltage VC IPP = 5 A (Note 4) 12.5 V Clamping Voltage VC IPP = 8 A (Note 4) 20 V Maximum Peak Pulse Current IPP 8x20 ms Waveform (Note 4) 25 A Junction Capacitance CJ VR = 0 V, f=1 MHz between I/O Pins and GND 3.0 5.0 pF Junction Capacitance CJ VR = 0 V, f=1 MHz between I/O Pins 1.5 3.0 pF Clamping Voltage VC @ IPP = 1 A (Notes 5 and 6) 16.6 V Clamping Voltage VC Per IEC 61000−4−2 (Note 7) Figure 1 and 2 V 2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Non−repetitive current pulse per Figure 5 (Pin 5 to Pin 2) 5. Non−repetitive current pulse per FIgure 5 (Any I/O Pins) 6. Surge current waveform per Figure 5. 7. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 |
Similar Part No. - NUP4201MR6_09 |
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Similar Description - NUP4201MR6_09 |
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