MPSW55 datasheet(3/4 Pages) ONSEMI

Part #	MPSW55

Description	One Watt Amplifier Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MPSW55, MPSW56

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3

IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

-1.0

-0.8

-0.6

-0.4

-0.2

0

-0.1

-10

-1.0

TJ = 25°C

IC = -10 mA

-0.05

-0.2

-0.5

-2.0

-5.0

-20

-50

-100 mA

-250 mA

-500 mA

-50

mA

IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

-1.0

-0.8

-0.6

-0.4

-0.2

0

TJ = 25°C

VBE(on) @ VCE = -1.0 V

VCE(sat) @ IC/IB = 10

-0.5

VBE(sat) @ IC/IB = 10

-1.0

-2.0

-5.0

-10

-20

-50

-100 -200

-500

IC, COLLECTOR CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

-0.8

-2.8

-1.0

-100

-10

qVB for VBE

-0.5

-2.0

-5.0

-20

-50

-200

-1.2

-1.6

-2.0

-2.4

-500

Figure 5. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

-100

-50

-20

-10

-5.0

-2.0

-1.0

-0.5

-0.2

-0.1

100

70

50

30

20

5.0

TJ = 25°C

Cobo

Cibo

10

7.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

-2 k

-1.0

MPSW55

-2.0

-5.0

Figure 6. Current−Gain — Bandwidth Product

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

-500

-200

-100

-50

-20

-10

-20

-60 -80 -100

MPSW56

100

ms

1.0 ms

1.0 s

TC = 25°C

TA = 25°C

dc

-1 k

DUTY CYCLE

≤ 10%

IC, COLLECTOR CURRENT (mA)

-200

-70

-50

-30

-20

-10

-7.0

-5.0

-3.0

-2.0

200

100

70

50

20

VCE = -2.0 V

TJ = 25°C

-100

30

Figure 7. Active Region — Safe Operating

Area

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