MPSW51ARLRPG datasheet(2/5 Pages) ONSEMI

Part #	MPSW51ARLRPG

Description	One Watt High Current Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MPSW51, MPSW51A

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = −1.0 mAdc, IB = 0)

MPSW51

MPSW51A

V(BR)CEO

−30

−40

−

Vdc

Collector−Base Breakdown Voltage

(IC = −100 mAdc, IE = 0)

MPSW51

MPSW51A

V(BR)CBO

−40

−50

−

Vdc

Emitter−Base Breakdown Voltage

(IE = −100 mAdc, IC = 0)

V(BR)EBO

−5.0

−

Vdc

Collector Cutoff Current

(VCB = −30 Vdc, IE = 0)

MPSW51

(VCB = −40 Vdc, IE = 0)

MPSW51A

ICBO

−

−0.1

mAdc

Emitter Cutoff Current

(VEB = −3.0 Vdc, IC = 0)

IEBO

−

−0.1

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −10 mAdc, VCE = −1.0 Vdc)

(IC = −100 mAdc, VCE = −1.0 Vdc)

(IC = −1000 mAdc, VCE = −1.0 Vdc)

hFE

55

60

50

−

Collector−Emitter Saturation Voltage

(IC = −1000 mAdc, IB = −100 mAdc)

VCE(sat)

−

−0.7

Vdc

Base −Emitter On Voltage

(IC = −1000 mAdc, VCE = −1.0 Vdc)

VBE(on)

−

−1.2

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −50 mAdc, VCE = −10 Vdc, f = 20 MHz)

fT

50

−

MHz

Output Capacitance

(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

30

pF

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION

Device

Package

Shipping†

MPSW51G

TO−92

(Pb−Free)

5000 Units / Bulk

MPSW51AG

TO−92

(Pb−Free)

5000 Units / Bulk

MPSW51RLRAG

TO−92

(Pb−Free)

2000 / Tape & Reel

MPSW51ARLRPG

TO−92

(Pb−Free)

2000 / Ammo Pack

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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