MPSW05G datasheet(2/4 Pages) ONSEMI

Part #	MPSW05G

Description	One Watt Amplifier Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MPSW05, MPSW06

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0)

MPSW05

MPSW06

V(BR)CEO

60

80

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

V(BR)EBO

4.0

−

Vdc

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

MPSW05

(VCE = 60 Vdc, IB = 0)

MPSW06

ICES

−

0.5

mAdc

Collector Cutoff Current

(VCB = 40 Vdc, IE = 0)

MPSW05

(VCB = 60 Vdc, IE = 0)

MPSW06

ICBO

−

0.1

mAdc

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

IEBO

−

0.1

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 250 mAdc, VCE = 1.0 Vdc)

hFE

80

60

−

Collector−Emitter Saturation Voltage

(IC = 250 mAdc, IB = 10 mAdc)

VCE(sat)

−

0.4

Vdc

Base−Emitter Saturation Voltage

(IC = 250 mAdc, VCE = 5.0 Vdc)

VBE(sat)

−

1.2

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 200 mAdc, VCE = 5.0 Vdc, f = 20 MHz)

fT

50

−

MHz

Output Capacitance

(VCB = 10 V, f = 1.0 MHz)

Cobo

−

12

pF

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

400

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

100

80

60

40

TJ = 125°C

25

°C

-55

°C

VCE = 1.0 V

300

500

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MPSW05G Datasheet(PDF) 2 Page - ON Semiconductor

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