MMBT6517LT1G datasheet(4/5 Pages) ONSEMI

Part #	MMBT6517LT1G

Description	High Voltage Transistor

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MMBT6517LT1G

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4

Figure 6. Turn−On Time

IC, COLLECTOR CURRENT (mA)

100

1.0

2.0

3.0

5.0 7.0

10

20

30

50

70

1.0k

20

10

Figure 7. Turn−Off Time

IC, COLLECTOR CURRENT (mA)

100

1.0

2.0 3.0

5.0 7.0

10

20

30

50

70

30

50

70

100

200

300

500

700

td @ VBE(off) = 2.0 V

tr

VCE(off) = 100 V

IC/IB = 5.0

TJ = 25°C

10k

100

200

300

500

700

1.0k

2.0k

3.0k

5.0k

7.0k

VCE(off) = 100 V

IC/IB = 5.0

IB1 = IB2

TJ = 25°C

ts

tf

Figure 8. Switching Time Test Circuit

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

10k

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

1.0k

2.0k

5.0k

t, TIME (ms)

Figure 9. Thermal Response

+10.8 V

-9.2 V

+VCC

2.2 k

20 k

50

W SAMPLING SCOPE

1/2MSD7000

1.0 k

VCC ADJUSTED

FOR VCE(off) = 100 V

APPROXIMATELY

-1.35 V

(ADJUST FOR V(BE)off = 2.0 V)

PULSE WIDTH

≈ 100 ms

tr, tf ≤ 5.0 ns

DUTY CYCLE

≤ 1.0%

FOR PNP TEST CIRCUIT,

REVERSE ALL VOLTAGE POLARITIES

D = 0.5

0.2

0.1

0.05

SINGLE PULSE

ZqJC(t) = r(t) • RqJC

ZqJA(t) = r(t) • RqJA

RqJC(t) = r(t) RqJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

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