MMBT3904TT1_07 datasheet(2/7 Pages) ONSEMI

Part #	MMBT3904TT1

Description	General Purpose Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBT3904TT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (Note 3)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

40

-

Vdc

Collector-Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

60

-

Vdc

Emitter-Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

6.0

-

Vdc

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

IBL

-

50

nAdc

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

ICEX

-

50

nAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

hFE

40

70

100

60

30

-

300

-

Collector-Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat)

-

0.2

0.3

Vdc

Base-Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VBE(sat)

0.65

-

0.85

0.95

Vdc

SMALL-SIGNAL CHARACTERISTICS

Current-Gain - Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

fT

300

-

MHz

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

-

4.0

pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

-

8.0

pF

Input Impedance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

hie

1.0

10

k

W

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

hre

0.5

8.0

X 10- 4

Small-Signal Current Gain

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

hfe

100

400

-

Output Admittance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

hoe

1.0

40

mmhos

Noise Figure

(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)

NF

-

5.0

dB

SWITCHING CHARACTERISTICS

Delay Time

(VCC = 3.0 Vdc, VBE = -0.5 Vdc)

MMBT3904TT1

td

-

35

ns

Rise Time

(IC = 10 mAdc, IB1 = 1.0 mAdc)

MMBT3904TT1

tr

-

35

Storage Time

(VCC = 3.0 Vdc, IC = 10 mAdc)

MMBT3904TT1

ts

-

200

ns

Fall Time

(IB1 = IB2 = 1.0 mAdc)

MMBT3904TT1

tf

-

50

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

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