MJW3281AG datasheet(5/6 Pages) ONSEMI

Part #	MJW3281AG

Description	Complementary NPN-PNP Silicon Power Bipolar Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJW3281A (NPN) MJW1302A (PNP)

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Figure 13. Active Region Safe Operating Area

VCE, COLLECTOR EMITTER (VOLTS)

Figure 14. Active Region Safe Operating Area

PNP MJW1302A

NPN MJW3281A

100

1.0

0.1

1000

10

1.0

100

10

VCE, COLLECTOR EMITTER (VOLTS)

100

1.0

0.1

1000

10

1.0

100

10

100 mSec

10 mSec

1 Sec

100 mSec

10 mSec

1 Sec

There are two limitations on the power handling ability of

a transistor; average junction temperature and secondary

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 13 and 14 is based on TJ(pk) = 150°C;

TC is variable depending on conditions. At high case

temperatures, thermal limitations will reduce the power than

can be handled to values less than the limitations imposed by

second breakdown.

Figure 15. MJW1302A Typical Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 16. MJW3281A Typical Capacitance

VR, REVERSE VOLTAGE (VOLTS)

10000

1000

100

10

1.0

0.1

10000

1000

100

10

1.0

0.1

TJ = 25°C

ftest = 1 MHz

Cib

Cob

TJ = 25°C

ftest = 1 MHz

Cib

Cob

PNP MJW1302A

NPN MJW3281A

TYPICAL CHARACTERISTICS

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