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MJL21196G Datasheet(PDF) 2 Page - ON Semiconductor |
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MJL21196G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page MJL21195, MJL21196 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS (Note 2) Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) VCEO(sus) 250 − − Vdc Collector Cutoff Current (VCE = 200 Vdc, IB = 0) ICEO − − 100 mAdc OFF CHARACTERISTICS (Note 3) Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO − − 100 mAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX − − 100 mAdc SECOND BREAKDOWN (Note 3) Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (Nonrepetitive) (VCE = 80 Vdc, t = 1 s (Nonrepetitive) IS/b 4.0 2.25 − − − − Adc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) hFE 25 8.0 − − 100 − Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) − − 2.2 Vdc Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) − − − − 1.4 4 Vdc DYNAMIC CHARACTERISTICS (Note 3) Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS hFE unmatched (Matched pair hFE = 50 @ 5 A/5 V) hFE matched THD − − 0.8 0.08 − − % Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) fT 4 − − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) Cob − − 500 pF 2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤10%. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%. IC, COLLECTOR CURRENT (A) Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product PNP MJL21195 NPN MJL21196 IC, COLLECTOR CURRENT (A) 6.5 6.0 5.5 5.0 4.5 4.0 2.5 2.0 1.0 10 0.1 7.5 7.0 6.0 5.0 4.0 3.0 2.0 1.0 10 0.1 1.0 VCE = 10 V TJ = 25°C ftest = 1 MHz VCE = 10 V TJ = 25°C ftest = 1 MHz 3.5 3.0 6.5 5.5 4.5 3.5 2.5 1.5 VCE = 5 V VCE = 5 V |
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