MJE18004G, MJF18004G

http://onsemi.com

6

0.1

Figure 13. Inductive Fall Time

Figure 14. Inductive Crossover Time

Figure 15. Forward Bias Safe Operating Area

Figure 16. Reverse Bias Safe Operating Area

Figure 17. Forward Bias Power Derating

There are two limitations on the power handling ability of a tran-

sistor: average junction temperature and second breakdown. Safe

must be observed for reliable operation; i.e., the transistor must not

be subjected to greater dissipation than the curves indicate. The data

power level. Second breakdown pulse limits are valid for duty

down limitations do not derate the same as thermal limitations. Al-

lowable current at the voltages shown on Figure 15 may be found at

any case temperature by using the appropriate curve on Figure 17.

case temperatures, thermal limitations will reduce the power that

can be handled to values less the limitations imposed by second

breakdown. For inductive loads, high voltage and current must be

sustained simultaneously during turn−off with the base−to−emitter

junction reverse biased. The safe level is specified as a reverse−

biased safe operating area (Figure 16). This rating is verified under

clamped conditions so that the device is never subjected to an ava-

lanche mode.

GUARANTEED SAFE OPERATING AREA INFORMATION

3

6

12

15

9

70

4

5

7

8

10

11

13

14

3

6

12

15

50

4

5

13

14

10

1000

100

0.01

400

600

1100

900

0

500

800

700

1000

80

90

100

110

120

130

140

150

160

200

300

150

100

250

1.0

10

100

1.0

2.0

3.0

4.0

5.0

6.0

9

78

10

11

TYPICAL SWITCHING CHARACTERISTICS

1.0

0.8

0.6

0.4

0.2

0

160

140

120

100

80

60

40

20

1

ms

10

ms

50

ms

1ms

5ms

DC (MJE18004)

DC (MJF18004)

Extended

SOA

0 V

-1.5 V

-5 V

SECOND

BREAKDOWN

DERATING

THERMAL

DERATING