MJE18008G datasheet(3/10 Pages) ONSEMI

Part #	MJE18008G

Description	NPN Bipolar Power Transistor For Switching Power Supply Applications

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Manufacturer	ONSEMI [ON Semiconductor]

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MJE18008G, MJF18008G

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3

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

0.01

100

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

Figure 2. DC Current Gain @ 5 Volts

Figure 3. Collector Saturation Region

Figure 4. Collector−Emitter Saturation Voltage

Figure 5. Base−Emitter Saturation Region

Figure 6. Capacitance

10

1

110

100

10

1

0.01

0.1

1

10

2

0.01

IB, BASE CURRENT (AMPS)

10

1

0.01

IC COLLECTOR CURRENT (AMPS)

0.1

1.3

1

0.8

0.4

0.01

IC, COLLECTOR CURRENT (AMPS)

0.1

1

10

1000

100

1

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1

1000

1

0

0.1

110

10000

10

0.1

1

10

TJ = 25°C

TJ = -20°C

TJ = 125°C

TJ = 25°C

IC/IB = 10

IC/IB = 5

1.1

0.9

0.6

0.5

1.5

1.2

TJ = 25°C

3 A

5 A

8 A 10 A

TJ = 25°C

TJ = 125°C

TJ = 25°C

TJ = 125°C

IC/IB = 5

IC/IB = 10

TJ = -20°C

IC = 1 A

0.7

Cob

100

Cib

TYPICAL STATIC CHARACTERISTICS

VCE = 1 V

VCE = 5 V

TJ = 25°C

f = 1 MHz

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