© Semiconductor Components Industries, LLC, 2006

February, 2006 − Rev. 2

1

Publication Order Number:

MJE344/D

MJE344

Plastic NPN Silicon

Medium−Power Transistor

This device is useful for medium voltage applications requiring high

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

200

Vdc

Collector−Base Voltage

200

Vdc

Emitter Base Voltage

5.0

Vdc

Collector Current − Continuous

500

mAdc

Base Current

250

mAdc

Derate above 25

_C

20

0.16

W

mW/

_C

Operating and Storage Junction

Temperature Range

–65 to +150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

6.25

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

Shipping

ORDERING INFORMATION

MJE344

TO−225

500 Units/Box

0.5 AMPERE

POWER TRANSISTORS

NPN SILICON

150−200 VOLTS, 20 WATTS

http://onsemi.com

MJE344G

TO−225

(Pb−Free)

500 Units/Box

TO−225

CASE 77

STYLE 1

2 1

3

MARKING DIAGRAM

YWW

JE344G

Y

= Year

WW

= Work Week

JE344 = Device Code

G

= Pb−Free Package