MJE210 datasheet(3/6 Pages) ONSEMI

Part #	MJE210

Description	Complementary Silicon Power Plastic Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJE200 - NPN,

MJE210 - PNP

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3

Figure 2. Switching Time Test Circuit

+11 V

25

ms

0

-9.0 V

RB

-4 V

D1

SCOPE

VCC

+30 V

RC

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

51

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

1K

IC, COLLECTOR CURRENT (AMPS)

VCC = 30 V

IC/IB = 10

TJ = 25°C

500

300

200

100

50

td

30

20

10

5

1

0.01

0.03 0.05

0.5

0.2

0.1

0.3

10

Figure 3. Turn-On Time

3

2

5

2

13

tr

MJE200

MJE210

0.02

t, TIME (ms)

0.01

0.02

0.05

1.0

2.0

5.0

10

20

50

100

200

0.1

0.5

0.2

1.0

0.2

0.1

0.05

qJC(t) = r(t) qJC

qJC = 8.34°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.2

0 (SINGLE PULSE)

Figure 4. Thermal Response

0.5

D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.1

0.02

0.01

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