MJD32CT4G datasheet(3/10 Pages) ONSEMI

Part #	MJD32CT4G

Description	Complementary Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)

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3

25

Figure 1. Power Derating

T, TEMPERATURE (

°C)

0

50

75

100

125

150

20

15

10

5

Figure 2. Switching Time Test Circuit

3

0.03

IC, COLLECTOR CURRENT (AMPS)

0.03

0.05 0.07 0.1

0.2

0.5 0.7

IB1 = IB2

IC/IB = 10

ts′ = ts - 1/8 tf

TJ = 25°C

0.3

2

1

0.7

0.5

0.3

ts′

0.2

0.1

0.07

0.05

12

Figure 3. Turn−On Time

2

IC, COLLECTOR CURRENT (AMPS)

0.02

IC/IB = 10

TJ = 25°C

1

0.7

0.5

0.3

0.1

0.07

0.05

0.03

+11 V

25

ms

0

-9 V

RB

-4 V

D1

SCOPE

VCC

+30 V

RC

tr, tf ≤ 10 ns

DUTY CYCLE = 1%

51

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

REVERSE ALL POLARITIES FOR PNP.

0.03

0.07

0.3

3

0.1

0.7

0.05

0.5

1

tr @ VCC = 30 V

tr @ VCC = 10 V

td @ VBE(off) = 2 V

tf @ VCC = 30 V

tf @ VCC = 10 V

2.5

0

2

1.5

1

0.5

TA TC

Figure 4. Turn−Off Time

TA (SURFACE MOUNT)

TC

TYPICAL CHARACTERISTICS

t, TIME (ms)

1

0.01

1 k

0.3

0.2

0.07

RqJC(t) = r(t) RqJC

RqJC = 8.33°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

SINGLE PULSE

0.01

0.7

D = 0.5

Figure 5. Thermal Response

0.5

0.1

0.05

0.03

0.02

0.02 0.03

0.05

0.1

0.2 0.3

0.5

1

2

3

5

10

20

30

50

100

200 300

500

0.2

0.1

0.05

0.01

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