MJD45H11G datasheet(1/8 Pages) ONSEMI

Part #	MJD45H11G

Description	Complementary Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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January, 2011 − Rev. 10

1

Publication Order Number:

MJD44H11/D

MJD44H11 (NPN)

MJD45H11 (PNP)

Complementary Power

Transistors

DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or

driver stages in applications such as switching regulators, converters,

and power amplifiers.

Features

• Lead Formed for Surface Mount Application in Plastic Sleeves

(No Suffix)

• Straight Lead Version in Plastic Sleeves (“−1” Suffix)

• Electrically Similar to Popular D44H/D45H Series

• Low Collector Emitter Saturation Voltage −

VCE(sat) = 1.0 Volt Max @ 8.0 Amperes

• Fast Switching Speeds

• Complementary Pairs Simplifies Designs

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C

u 400 V

• These are Pb−Free Packages

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector−Emitter Voltage

VCEO

80

Vdc

Emitter−Base Voltage

VEB

5

Vdc

Collector Current

− Continuous

− Peak

IC

8

16

Adc

Total Power Dissipation

@ TC = 25°C

Derate above 25°C

PD

20

0.16

W

W/°C

Total Power Dissipation (Note 1)

@ TA = 25°C

Derate above 25°C

PD

1.75

0.014

W

W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg −55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

6.25

°C/W

Thermal Resistance, Junction−to−Ambient

(Note 1)

RqJA

71.4

°C/W

Lead Temperature for Soldering

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

SILICON

POWER TRANSISTORS

8 AMPERES

80 VOLTS, 20 WATTS

DPAK−3

CASE 369D

STYLE 1

DPAK

CASE 369C

STYLE 1

MARKING

DIAGRAMS

A

= Assembly Location

Y

= Year

WW

= Work Week

J4xH11 = Device Code

x = 4 or 5

G= Pb−Free Package

1 2

3

4

AYWW

J4

xH11G

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

1

2

3

4

AYWW

J4

xH11G

http://onsemi.com

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