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RD09MUP2 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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RD09MUP2 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 8 page Silicon RF Power Semiconductors RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2 17 Aug 2010 1/8 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS INDEX MARK [Gate] Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source (b) (b) 0.95+/-0.2 2.6+/-0.2 7.0+/-0.2 (c) (a) 8.0+/-0.2 NOTES: 1. ( ) Typical value UNIT:mm (d) 0.2+/-0.05 TOP VIEW SIDE VIEW BOTTOM VIEW SIDE VIEW (4.5) DETAIL A DETAIL A DESCRIPTION RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. FEATURES •High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz •High Efficiency: 50%min. (520MHz) •Integrated gate protection diode APPLICATION For output stage of high power amplifiers in UHF band mobile radio sets. RoHS COMPLIANT RD09MUP2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 40 V VGSS Gate to source voltage Vds=0V -5 to +10 V ID Drain Current - 4.0 A Pin Input Power Zg=Zl=50Ω 1.6 W Pch Channel dissipation Tc=25°C 83 W Tj Junction Temperature - 150 °C Tstg Storage temperature - -40 to +125 °C Rth j-c Thermal resistance Junction to case 1.5 °C/W SCHEMATIC DRAWING Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) LIMITS UNIT SYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 10 uA IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA VTH Gate threshold Voltage VDS=12V, IDS=1mA 0.5 - 2.5 V Pout Output power 8 9 - W ηD Drain efficiency f=520MHz , VDD=7.2V Pin=0.8W,Idq=1.0A 50 - - % VSWRT Load VSWR tolerance VDD=9.5V,Po=8W(Pin Control) f=520MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Note: Above parameters, ratings, limits and conditions are subject to change. G S D |
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