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RD09MUP2 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part # RD09MUP2
Description  RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RD09MUP2 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

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Silicon RF Power Semiconductors
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
RD09MUP2
17 Aug 2010
1/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
INDEX MARK
[Gate]
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
(b)
(b)
0.95+/-0.2
2.6+/-0.2
7.0+/-0.2
(c)
(a)
8.0+/-0.2
NOTES:
1. ( ) Typical value
UNIT:mm
(d)
0.2+/-0.05
TOP VIEW
SIDE VIEW
BOTTOM VIEW
SIDE VIEW
(4.5)
DETAIL A
DETAIL A
DESCRIPTION
RD09MUP2 is a MOS FET type transistor
specifically designed for UHF RF power
amplifiers applications.
FEATURES
•High power gain:
Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
•High Efficiency: 50%min. (520MHz)
•Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in
UHF band mobile radio sets.
RoHS COMPLIANT
RD09MUP2 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
RATINGS
UNIT
VDSS
Drain to source voltage
Vgs=0V
40
V
VGSS
Gate to source voltage
Vds=0V
-5 to +10
V
ID
Drain Current
-
4.0
A
Pin
Input Power
Zg=Zl=50
1.6
W
Pch
Channel dissipation
Tc=25°C
83
W
Tj
Junction Temperature
-
150
°C
Tstg
Storage temperature
-
-40 to +125
°C
Rth j-c
Thermal resistance
Junction to case
1.5
°C/W
SCHEMATIC DRAWING
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS
UNIT
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX.
IDSS
Zero gate voltage drain current VDS=17V, VGS=0V
-
-
10
uA
IGSS
Gate to source leak current
VGS=10V, VDS=0V
-
-
1
uA
VTH
Gate threshold Voltage
VDS=12V, IDS=1mA
0.5
-
2.5
V
Pout
Output power
8
9
-
W
ηD
Drain efficiency
f=520MHz , VDD=7.2V
Pin=0.8W,Idq=1.0A
50
-
-
%
VSWRT Load VSWR tolerance
VDD=9.5V,Po=8W(Pin Control)
f=520MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
No destroy
-
Note: Above parameters, ratings, limits and conditions are subject to change.
G
S
D


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