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RD07MUS2B Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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RD07MUS2B Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 17 page Silicon RF Power Semiconductors RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W RD07MUS2B 23 Dec 2010 1/17 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING 0.2+/-0.05 INDEX MARK (Gate) 6.0+/-0.15 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 (0.25) 2 3 1 (0.25) DESCRIPTION RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. FEATURES High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode. APPLICATION For output stage of high power amplifiers in VHF/UHF/800MHz-band mobile radio sets. RoHS COMPLIANT RD07MUS2B is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1. Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 25 V VGSS Gate to source voltage Vds=0V -5/+10 V Pch Channel dissipation Tc=25°C 50 W Pin Input Power Zg=Zl=50 0.8* W ID Drain Current - 3 A Tch Junction Temperature - 150 °C Tstg Storage temperature - -40 to +125 °C Rth j-c Thermal resistance Junction to case 2.5 °C/W Note: Above parameters are guaranteed independently. *: 175MHz spec. is 0.6W ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) LIMITS UNIT SYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Drain cutoff current VDS=17V, VGS=0V - - 10 uA IGSS Gate cutoff current VGS=5V, VDS=0V - - 1 uA VTH Gate threshold Voltage VDS=7.2V, IDS=1mA 0.5 1 1.5 V Pout1 Output power - 7.2* - W D1 Drain efficiency f=175MHz,VDD=7.2V Pin=0.3W,Idq=250mA - 65* - % Pout2 Output power 7** 8** - W D2 Drain efficiency f=527MHz ,VDD=7.2V Pin=0.4W,Idq=250mA 58** 63** - % Pout3 Output power - 7*** - W D3 Drain efficiency f=870MHz ,VDD=7.2V Pin=0.5W,Idq=250mA - 58*** - % VSWRT Load VSWR tolerance VDD=9.5V,Po=7W(Pin Control) f=527MHz,Idq=250mA,Zg=50 Load VSWR=20:1(All Phase) No destroy - Note: Above parameters, ratings, limits and conditions are subject to change. * At 135-175MHz broad matching ** At 450-527MHz broad matching *** At 763-870MHz broad matching |
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