BD440G datasheet(2/4 Pages) ONSEMI

Part #	BD440G

Description	Plastic Medium Power Silicon PNP Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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BD436, BD438, BD440, BD442

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector−Emitter Breakdown Voltage

BD436

(IC = 100 mA, IB = 0)

BD438

BD440

BD442

V(BR)CEO

32

45

60

80

−

Vdc

Collector−Base Breakdown Voltage

BD436

(IC = 100 mA, IB = 0)

BD438

BD440

BD442

V(BR)CBO

32

45

60

80

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 100 mA, IC = 0)

V(BR)EBO

5.0

−

Vdc

Collector Cutoff Current

(VCB = 32 V, IE = 0)

BD436

(VCB = 45 V, IE = 0)

BD438

(VCB = 60 V, IE = 0)

BD440

(VCB = 80 V, IE = 0)

BD442

ICBO

−

0.1

mAdc

Emitter Cutoff Current

(VEB = 5.0 V)

IEBO

−

1.0

mAdc

DC Current Gain

BD436

(IC = 10 mA, VCE = 5.0 V)

BD438

BD440

BD442

hFE

40

30

20

15

−

DC Current Gain

BD436

(IC = 500 mA, VCE = 1.0 V)

BD438

BD440

BD442

hFE

85

40

−

475

DC Current Gain

BD436

(IC = 2.0 A, VCE = 1.0 V)

BD438

BD440

BD442

hFE

50

40

25

15

−

Collector Saturation Voltage

(IC = 2.0 A, IB = 0.2 A)

BD436

(IC = 3.0 A, IB = 0.3 A)

BD438

BD440

BD442

VCE(sat)

−

0.5

0.7

0.8

Vdc

Base−Emitter On Voltage

BD436/BD438

(IC = 2.0 A, VCE = 1.0 V)

BD440/BD442

VBE(ON)

−

1.1

1.5

Vdc

Current−Gain − Bandwidth Product

(VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz)

fT

3.0

−

MHz

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