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RA45H8994M1 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # RA45H8994M1
Description  896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA45H8994M1 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA45H8994M1
RA45H8994M1
25 Jun 2010
3/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
2
nd, 3rd HARMONICS versus FREQUENCY
versus FREQUENCY
INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
versus DRAIN VOLTAGE
0
10
20
30
40
50
60
70
80
90
24
68
10
12
14
16
DRAIN VOLTAGE VDD (V)
0
2
4
6
8
10
12
14
16
18
P
out
f=896M Hz
V
GG1=3.4V
V
GG2=5V
P
in=50m W
I DD
0
10
20
30
40
50
60
-10-5
0
5
10
1520
INPUT POWER Pin (dBm)
0
4
8
12
16
20
24
f=915MHz
V
DD=12.8V
V
GG1=3.4V
V
GG2=5V
P
out
Gp
I DD
0
10
20
30
40
50
60
-10-5
0
5
101520
INPUT POWER Pin (dBm)
0
4
8
12
16
20
24
f=925M Hz
V
DD=12.8V
V
GG1=3.4V
V
GG2=5V
P
out
Gp
I DD
0
10
20
30
40
50
60
-10-5
0
5
10
1520
INPUT POWER Pin (dBm)
0
4
8
12
16
20
24
f=941M Hz
V
DD=12.8V
V
GG1=3.4V
V
GG2=5V
P
out
Gp
I DD
0
10
20
30
40
50
60
-10-5
0
5
10
1520
INPUT POWER Pin (dBm)
0
4
8
12
16
20
24
f=896MHz
V
DD=12.8V
V
GG1=3.4V
V
GG2=5V
P
out
Gp
I DD
10
20
30
40
50
60
70
80
860 870 880 890 900 910 920 930 940 950 960
FREQUENCY f (MHz)
V
DD=12.8V
V
GG1=3.4V
V
GG2=5V
P
in=50m W
P
out
η
T
-80
-70
-60
-50
-40
-30
860 870 880 890 900 910 920 930 940 950 960
FREQUENCY f (MHz)
V
DD=12.8V
V
GG1=3.4V
V
GG2=5V
P
in=50m W
2
nd
3
rd
1
2
3
4
5
860 870 880 890 900 910 920 930 940 950 960
FREQUENCY f (MHz)
V
DD=12.8V
V
GG1=3.4V
V
GG2=5V
P
in=50m W
ρ
in
0
10
20
30
40
50
60
70
80
90
24
68
10
12
14
16
DRAIN VOLTAGE VDD (V)
0
2
4
6
8
10
12
14
16
18
P
out
f=915M Hz
V
GG1=3.4V
V
GG2=5V
P
in=50m W
I DD


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