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RA30H0608M-101 Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor |
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RA30H0608M-101 Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor |
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6 / 9 page  Silicon RF Power Semiconductors RoHS COMPLIANCE RA30H0608M RA30H0608M 24 Jun 2010 6/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) TEST BLOCK DIAGRAM EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT C1, C2: 4700pF, 22uF in parallel Directional Coupler Attenuator Power Meter Spectrum Analyzer Signal Generator Attenuator Pre- amplifier Power Meter Directional Coupler DUT 5 4 3 2 1 ZG=50Ω ZL=50Ω C1 C2 - + DC Power Supply VGG + - DC Power Supply VDD Attenuator EQUIVALENT CIRCUIT 2 3 1 5 4 |
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