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SUT121G Datasheet(PDF) 1 Page - KODENSHI_AUK CORP. |
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SUT121G Datasheet(HTML) 1 Page - KODENSHI_AUK CORP. |
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1 / 5 page  KSD-T7K003-000 1 SUT121G Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE(sat)= 0.5V Max • 2 NPN chips in TESOP-8 Package Ordering Information Type NO. Marking Package Code SUT121G SUT121 □ TESOP-8 □ : Year & Week Code Absolute maximum ratings(TR1, TR2) (Ta=25 °C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 120 V Collector-Emitter voltage VCEO 120 V Emitter-Base voltage VEBO 6 V IC 1 A(DC) Collector current ICP* 2 A(Pulse) 0.75 W/TOTAL PC(Ta=25°C) ** 0.55 W/ELEMENT Collector power dissipation PC(Tc=25°C) 7.5 W/TOTAL Junction temperature TJ 150 °C Storage temperature Tstg -55~150 °C * : Single pulse, tp= 300 ㎲ ** : Each terminal mounted on a recommended solder land Electrical Characteristics(TR1, TR2) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=100μA, IE=0 120 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 120 - - V Emitter-Base breakdown voltage BVEBO IE=100μA, IC=0 6 - - V Collector cut-off current ICBO VCB=120V, IE=0 - - 0.1 ㎂ Emitter cut-off current IEBO VEB=4V, IC=0 - - 0.1 ㎂ DC current gain hFE 1) VCE=5V, IC= 30 ㎃ 200 - 400 - Collector-Emitter saturation voltage VCE(sat) IC=500mA, IB=50mA - - 0.5 V Base-Emitter saturation voltage VBE(sat) IC=500mA, IB=50mA - - 1.2 V Transition frequency fT VCE=5V, IC= 50 ㎃ - 170 - ㎒ Collector output capacitance Cob VCB=10V, IE=0, f=1 ㎒ - 10 - ㎊ Note 1) hFE Rank : 200~400 only TESOP-8 |
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