KSD-T5P008-000

2

Absolute maximum ratings(TR1, TR2)

(Ta=25

°C)

Characteristic

Symbol

Ratings

Unit

Collector-Base voltage

100

V

Collector-Emitter voltage

90

V

Emitter-Base voltage

6

V

0.3

A(DC)

Collector current

0.6

A(Pulse)

Collector power dissipation

0.5

W

Junction temperature

150

°C

Storage temperature

-55~150

°C

* :

Single pulse, tp= 300 ㎲

** : Total rating(Each terminal mounted on a recommended solder land)

Electrical Characteristics(TR1, TR2)

(Ta=25

°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Collector-Base breakdown voltage

100

-

-

V

Collector-Emitter breakdown voltage

90

-

-

V

Emitter-Base breakdown voltage

6

-

-

V

Collector cut-off current

-

-

0.1

㎂

Emitter cut-off current

-

-

0.1

㎂

DC current gain

1)

80

-

250

-

2)

-

-

0.2

V

Collector-Emitter saturation voltage

2)

-

-

0.5

V

2)

-

-

1

V

Base-Emitter saturation voltage

2)

-

-

1

V

Transition frequency

100

-

400

㎒

Collector output capacitance

-

4

-

㎊

* Note 1) hFE Rank / A : 80~150, B : 130~250

* Note 2) Pulse Tester : Pulse Width ≤300

μs, Duty Cycle ≤2.0%

SUT093N