MGFX39V0717_11 datasheet(1/3 Pages) MITSUBISHI

Part #	MGFX39V0717

Description	10.7-11.7 GHz BAND / 8W

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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Publication Date : Apr., 2011

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< X/Ku band internally matched power GaAs FET >

MGFX39V0717

10.7 – 11.7 GHz BAND / 8W

DESCRIPTION

The MGFX39V0717 is an internally impedance-matched

GaAs power FET especially designed for use in 10.7 – 11.7

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

FEATURES

Internally impedance matched

 High output power

P1dB=8.0W (TYP.) @f=10.7 – 11.7GHz

 High linear power gain

GLP=7.0dB (TYP.) @f=10.7 – 11.7GHz

 High power added efficiency

P.A.E.=26% (TYP.) @f=10.7 – 11.7GHz

APPLICATION

 For use in 10.7 – 11.7 GHz band power amplifiers

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=2.4A Refer to Bias Procedure

Absolute maximum ratings (Ta=25C)

Symbol

Parameter

Ratings

Unit

VGDO

Gate to drain breakdown voltage

-15

V

VGSO

Gate to source breakdown voltage

-15

V

ID

Drain current

5.6

A

IGR

Reverse gate current

-18

mA

IGF

Forward gate current

36

mA

PT *1

Total power dissipation

42.8

W

Tch

Cannel temperature

175

C

Tstg

Storage temperature

-65 to +175

C

*1 : Tc=25

C

Electrical characteristics (Ta=25C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

Max.

IDSS

Saturated drain current

VDS=3V,VGS=0V

-

4

5.6

A

gm

Transconductance

VDS=3V,ID=2.2A

-

2

-

S

VGS(off)

Gate to source cut-off voltage

VDS=3V,ID=20mA

-2

-3

-4

V

P1dB

Output power at 1dB gain compression

37.5

39

-

dBm

GLP

Linear Power Gain

6

7

-

dB

P.A.E.

Power added efficiency

-

26

-

%

Rth(ch-c) *2

Thermal resistance

VDS=10V,ID(RF off)=2.4A

f=10.7 – 11.7GHz

-

3.5

C/W

*2 :Channel-case

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum

effort into making semiconductor products better

and more reliable , but there is always the

possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal

injury , fire or property damage. Remember to give

due consideration to safety when making your

circuit designs , with appropriate measure such

as (I) placement of substitutive , auxiliary circuits ,

(ii) use of non-flammable material or (iii) prevention

against any malfunction or mishap.

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MGFX39V0717 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

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