BC560C datasheet(2/4 Pages) ONSEMI

Part #	BC560C

Description	Low Noise Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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BC560C

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −10 mAdc, IB = 0)

V(BR)CEO

−45

−

Vdc

Collector−Base Breakdown Voltage

(IC = −10 mAdc, IE = 0)

V(BR)CBO

−50

−

Vdc

Emitter−Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

V(BR)EBO

−5.0

−

Vdc

Collector Cutoff Current

(VCB = −30 Vdc, IE = 0)

(VCB = −30 Vdc, IE = 0, TA = +125°C)

ICBO

−

−15

−5.0

nAdc

mAdc

Emitter Cutoff Current

(VEB = −4.0 Vdc, IC = 0)

IEBO

−

−15

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −10 mAdc, VCE = −5.0 Vdc)

(IC = −2.0 mAdc, VCE = −5.0 Vdc)

hFE

100

380

270

500

−

800

−

Collector−Emitter Saturation Voltage

(IC = −10 mAdc, IB = −0.5 mAdc)

(IC = −10 mAdc, IB = (Note 1)

(IC = −100 mAdc, IB = −5.0 mAdc, (Note 2)

VCE(sat)

−

−0.075

−0.3

−0.25

−0.6

−

Vdc

Base −Emitter Saturation Voltage

(IC = −100 mAdc, IB = −5.0 mAdc)

VBE(sat)

−

−1.1

−

Vdc

Base−Emitter On Voltage

(IC = −10 mAdc, VCE = −5.0 Vdc)

(IC = −100 mAdc, VCE = −5.0 Vdc)

(IC = −2.0 mAdc, VCE = −5.0 Vdc)

VBE(on)

−

−0.55

−0.52

−0.55

−0.62

−

−0.7

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)

fT

−

250

−

MHz

Collector−Base Capacitance

(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)

Ccbo

−

2.5

−

pF

Small−Signal Current Gain

(IC = −2.0 mAdc, VCE = −5.0 V, f = 1.0 kHz)

hfe

450

600

900

pF

Noise Figure

(IC = −200 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz)

(IC = −200 mAdc, VCE = −5.0 Vdc, RS = 100 kW, f = 1.0 kHz, Df = 200 kHz)

NF1

NF2

−

0.5

−

2.0

10

dB

1. IB is value for which IC = −11 mA at VCE = −1.0 V.

2. Pulse test = 300 ms − Duty cycle = 2%.

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