KSD-T6S006-000

2

SMK1625D2

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

250

-

-

V

Gate threshold voltage

2.0

-

4.0

V

Drain-source cut-off current

-

-

1

uA

Gate leakage current

-

-

100

nA

Drain-source on-resistance



-

0.22

0.27



Forward transfer conductance



-

10.5

-

S

Input capacitance

Ciss

f=1MHz

-

968

1275

pF

Output capacitance

Coss

-

204

278

Reverse transfer capacitance

Crss

-

49

64

Turn-on delay time



-

15

-

ns

Rise time

-

130

-

Turn-off delay time

-

135

-

Fall time

-

105

-

Total gate charge



-

22

28

nC

Gate-source charge

-

7.1

-

Gate-drain charge

-

5.9

-

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Source current

Integral reverse diode

in the MOSFET

-

-

16

A

Source current (Pulsed)



-

-

64

Forward voltage



-

-

1.4

V

Reverse recovery time

-

208

-

ns

Reverse recovery charge

-

1.63

-

uC

Note ;

①

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

②

③

Pulse Test : Pulse Width≤ 300us, Duty cycle≤ 2%

④

Essentially independent of operating temperature