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MGFC36V5258 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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MGFC36V5258 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 3 page < C band internally matched power GaAs FET > MGFC36V5258 5.2 – 5.8 GHz BAND / 4W Publication Date : Apr., 2011 2 MGFC36V5258 TYPICAL CHARACTERISTICS( Ta=25deg.C ) MGFC36V5258 S-parameters( Ta=25deg.C , VDS=10(V),IDS=1.2(A) ) S Parameters(Typ.) S11 S21 S12 S22 f (GHz) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) 5.2 0.43 13 3.27 138 0.062 156 0.51 -17 5.3 0.30 -3 3.30 122 0.062 138 0.48 -28 5.4 0.19 -41 3.45 105 0.062 120 0.46 -39 5.5 0.18 -99 3.61 89 0.060 102 0.43 -51 5.6 0.28 -152 3.61 73 0.061 78 0.34 -66 5.7 0.39 179 3.45 55 0.059 56 0.26 -80 5.8 0.51 161 3.19 36 0.058 32 0.17 -98 P1dB,GLP vs. f Po,PAE vs. Pin S11,S22 vs. f S21,S12 vs. f |
Similar Part No. - MGFC36V5258_11 |
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Similar Description - MGFC36V5258_11 |
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