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MGF0915A Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part # MGF0915A
Description  High-power GaAs FET (small signal gain stage)
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

MGF0915A Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

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Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0915A
L & S BAND / 4.5W
SMD non - matched
DESCRIPTION
The MGF0915A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
 High output power
Po=36.5dBm(TYP.) @f=1.9GHz,Pin=23dBm
 High power gain
Gp=14.5dB(TYP.) @f=1.9GHz
 High power added efficiency
add=50%(TYP.) @f=1.9GHz,Pin=23dBm
 Hermetic Package
APPLICATION
 For UHF Band power amplifiers
QUALITY
 GG
RECOMMENDED BIAS CONDITIONS
 Vds=10V
 Ids=800mA
 Rg=100
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
Unit
VGSO
Gate to sourcebreakdown voltage
-15
V
VGDO
Gate to drain breakdown voltage
-15
V
ID
Drain current
3000
mA
IGR
Reverse gate current
-10
mA
IGF
Forward gate current
21
mA
PT
Total power dissipation
18.7
W
Tch
Cannel temperature
175
C
Tstg
Storage temperature
-65 to +175
C
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V,VGS=0V
-
2400
3000
mA
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=10mA
-1
-3
-5
V
gm
Transconductance
VDS=3V,ID=800mA
-
1000
-
mS
Po
Output power
VDS=10V,ID=800mA,f=1.9GHz
35.0
36.5
-
dBm
add
Power added Efficiency
Pin=23dBm
-
50
-
%
GLP
Linear Power Gain
VDS=10V,ID=800mA,f=1.9GHz
13.0
14.5
-
dB
Rth(ch-c)
Thermal Resistance
*1
Vf Method
-
5
8
C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Fig.1


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