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2N3019S Datasheet(PDF) 2 Page - ON Semiconductor |
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2N3019S Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 3 page 2N3019S http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (Note 1) (IC = 10 mAdc, VCE = 10 Vdc) (Note 1) (IC = 150 mAdc, VCE = 10 Vdc) (Note 1) (IC = 500 mAdc, VCE = 10 Vdc) (Note 1) (IC = 1.0 Adc, VCE = 10 Vdc) (Note 1) hFE 50 90 100 50 15 300 − 300 300 − − Collector−Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) − − 0.2 0.5 Vdc Base −Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) VBE(sat) − 1.1 Vdc SMALL−SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz) Cobo − 12 pF Small−Signal Current Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) |hfe| 5.0 20 − 1. Pulse Test: See section 4 of MIL−STD−750. |
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