2N3019S datasheet(2/3 Pages) ONSEMI

Part #	2N3019S

Description	Low Power Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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2N3019S

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc) (Note 1)

(IC = 10 mAdc, VCE = 10 Vdc) (Note 1)

(IC = 150 mAdc, VCE = 10 Vdc) (Note 1)

(IC = 500 mAdc, VCE = 10 Vdc) (Note 1)

(IC = 1.0 Adc, VCE = 10 Vdc) (Note 1)

hFE

50

90

100

50

15

300

−

300

−

Collector−Emitter Saturation Voltage (Note 1)

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

−

0.2

0.5

Vdc

Base −Emitter Saturation Voltage (Note 1)

(IC = 150 mAdc, IB = 15 mAdc)

VBE(sat)

−

1.1

Vdc

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance (VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz)

Cobo

−

12

pF

Small−Signal Current Gain

(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)

|hfe|

5.0

20

−

1. Pulse Test: See section 4 of MIL−STD−750.

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