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SDB110Q Datasheet(PDF) 2 Page - KODENSHI_AUK CORP. |
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SDB110Q Datasheet(HTML) 2 Page - KODENSHI_AUK CORP. |
2 / 5 page Rev. date: 25-AUG-10 KSD-D6D018-000 www.auk.co.kr 2 of 5 Absolute Maximum Ratings (T amb=25℃, Unless otherwise specified) Characteristic Symbol Ratings Unit DC reverse voltage VR 10 V Forward current IF 30 mA Non-repetitive peak forward surge current(t=10ms) IFSM 2 A Power dissipation 1) PD 150 mW 1) Device mounted on FR-4 board with recommended pad layout. Thermal Characteristics (T amb=25℃, Unless otherwise specified) Characteristic Symbol Ratings Unit Thermal resistance, junction to ambient 1) Rth(j-a) 833 C/W Operating junction temperature Tj 150 C Storage temperature range Tstg -55 ~ 150 C 1) Device mounted on FR-4 board with recommended pad layout. Electrical Characteristics (T amb=25℃, Unless otherwise specified) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage 2) VF(1) IF=1mA 0.1 - 0.3 V VF(2) IF=10mA - - 0.4 V VF(3) IF=30mA - - 0.5 V Reverse leakage current 3) IR(1) VR=5V - - 0.5 A IR(2) VR=10V - - 1 A Total capacitance CT VR=5V, f=1MHz - 4.2 - pF 2) Pulse test: tP≤380㎲, Duty cycle≤2% 3) Pulse test: tP≤5㎳, Duty cycle≤2% SDB110Q |
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