ADS1118

SBAS457A

– OCTOBER 2010 – REVISED JULY 2011

www.ti.com

ELECTRICAL CHARACTERISTICS (continued)

Maximum/minimum specifications at

–40°C to +125°C, VDD = 3.3V, data rate = 8SPS, and full-scale (FS) = ±2.048V, unless

otherwise noted. Typical values are at +25

°C, VDD = 3.3V, data rate = 8SPS, and full-scale (FS) = ±2.048V, unless otherwise

noted.

ADS1118

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

DIGITAL INPUT/OUTPUT

Logic level

0.7VDD

VDD

V

GND

0.2VDD

V

0.8VDD

V

GND

0.2VDD

V

Input leakage

±10

μA

±10

μA

POWER-SUPPLY REQUIREMENTS

Power-supply voltage

2

5.5

V

Power-down current at +25

°C

0.5

2

μA

Power-down current up to +125

°C

5

μA

Supply current

Operating current at +25

°C

150

200

μA

Operating current up to +125

°C

300

μA

VDD = 5.0V

0.9

mW

Power dissipation

VDD = 3.3V

0.5

mW

VDD = 2.0V

0.3

mW

TEMPERATURE

Storage temperature

–60

+150

°C

Specified temperature

–40

+125

°C

THERMAL INFORMATION

ADS1118

DGS

UNITS

10 PINS

Junction-to-ambient thermal resistance

186.8

Junction-to-case (top) thermal resistance

51.5

Junction-to-board thermal resistance

108.4

°C/W

Junction-to-top characterization parameter

2.7

Junction-to-board characterization parameter

106.5

Junction-to-case (bottom) thermal resistance

n/a

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

4

Copyright

© 2010–2011, Texas Instruments Incorporated