2007. 9. 10

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SEMICONDUCTOR

TECHNICAL DATA

PG03DBTFC

TVS Diode for ESD

Protection in Portable Electronics

Revision No : 1

Protection in Portable Electronics Applications.

FEATURES

Transient protection for data lines to

IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)

IEC 61000-4-4(EFT) 40A(tp=5/50ns)

IEC 61000-4-5(Lightning) 5A(tp=8/20 s)

Bidirectional Type Pin Configuration Structure.

Small package for use in portable electronics.

Suitable replacement for Multi-Layer Varistors in ESD protection applications.

Protects one I/O or power line.

Low clamping voltage.

Low leakage current.

APPLICATIONS

Cell phone handsets and accessories.

Cordless phone

Personal digital assistants (PDA s)

Notebooks, desktops, & servers.

Portable instrumentation.

MAXIMUM RATING (Ta=25

)

TFSC

DIM

MILLIMETERS

A

B

C

D

E

1.00 0.05

0.80+0.10/-0.05

0.60 0.05

0.30 0.05

0.40 MAX

CATHODE MARK

B

A

0.13 0.05

F

+

_

+

_

+

_

+

_

1. ANODE

2. ANODE

1

2

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Peak Pulse Power (tp=8/20 s)

50

W

Junction Temperature

-55

150

Storage Temperature

-55

150

Marking

21

21

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Reverse Stand-Off Voltage

-

-

-

3.3

V

Reverse Breakdown Voltage

4.2

-

6.2

V

Reverse Leakage Current

-

-

20

A

Clamping Voltage

-

-

17

V

Junction Capacitance

-

-

25

pF