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FMV24N25G Datasheet(PDF) 3 Page - Fuji Electric |
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FMV24N25G Datasheet(HTML) 3 Page - Fuji Electric |
3 / 5 page 2 3 FUJI POWER MOSFET FMV24N25G http://www.fujisemi.com -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS, ID=250µA Tch [˚C] 0 10 20 30 40 50 0 2 4 6 8 10 12 14 Vcc=72V Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=24.0A, Tch=25˚C 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 10 4 VDS [V] Typical Capacitance C=f(VDS):VGS=0V, f=1MHz Crss Coss Ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µspulsetest, Tch=25˚C 0 25 50 75 100 125 150 0 100 200 300 400 500 600 I AS=24.0A I AS=14.4A I AS=9.6A starting Tch [˚C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(startingTch):Vcc=48V, I(AV)<=24.0A 10 -1 10 0 10 1 10 0 10 1 10 2 Typical Switching Characteristics vs. ID t=f(ID):Vcc=72V, VGS=10V, RG=10Ω td(on) tr tf td(off) ID [A] |
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Similar Description - FMV24N25G |
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