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71M6515H-IGTR Datasheet(PDF) 8 Page - Teridian Semiconductor Corporation |
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71M6515H-IGTR Datasheet(HTML) 8 Page - Teridian Semiconductor Corporation |
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8 / 60 page  71M6515H Energy Meter IC DATA SHEET JULY 2011 Page: 8 of 60 © 2005 −2011 Teridian Semiconductor Corporation 1.6 A Maxim Integrated Products Brand Temperature Coefficient of Input Impedance Vin=65Hz 1.7 Ω/°C LSB size 355 nV/LSB Digital Full Scale +884736 LSB ADC Gain Error vs. %Power Supply Variation 3 . 3 / 3 3 100 / 357 10 6 A P V V nV Nout IN PK ∆ ∆ Vin=200mV pk, 65Hz V3P3A=3.0V, 3.6V 50 PPM/ % Input Offset (Vin-V3P3A) -10 +10 mV 1 Guaranteed by design; not production tested. RECOMMENDED EXTERNAL COMPONENTS NAME FROM TO FUNCTION VALUE UNIT C1 V3P3A AGND Bypass capacitor for 3.3V supply ≥0.1±20% µF C2 V3P3D DGND Bypass capacitor for 3.3V supply ≥0.1±20% µF XTAL XIN XOUT 32.768kHz crystal – electrically similar to ECS .327-12.5-17X or Vishay XT26T, load capacitance 12.5pF 32.768 kHz CXS XIN AGND Load capacitor for crystal (depends on crystal specs and board parasitics). 27 ±10% pF CXL XOUT AGND 27 ±10% pF C2P5 V2P5 DGND Bypass capacitor for V2P5 ≥0.1±20% µF FOOTNOTES: 1 This spec is guaranteed, has been verified in production samples, but is not measured in production. 2 This spec is guaranteed, has been verified in production samples, but is measured in production only at DC. 3 This spec is measured in production at the limits of the specified operating temperature. 4 This spec defines a nominal relationship rather than a measured parameter. Correct circuit operation is verified with other specs that use this nominal relationship as a reference |
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