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KF9N50P Datasheet(PDF) 2 Page - KEC(Korea Electronics) |
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KF9N50P Datasheet(HTML) 2 Page - KEC(Korea Electronics) |
2 / 7 page 2010. 12. 20 2/2 KF9N50P/F Revision No : 0 ELECTRICAL CHARACTERISTICS (Tc=25 ℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250μA, VGS=0V 500 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250μA, Referenced to 25℃ - 0.5 - V/ ℃ Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA Drain-Source ON Resistance RDS(ON) VGS=10V, ID=4.5A - 0.64 0.75 Ω Dynamic Total Gate Charge Qg VDS=400V, ID=9A VGS=10V (Note4,5) - 19 - nC Gate-Source Charge Qgs - 4.5 - Gate-Drain Charge Qgd - 7.5 - Turn-on Delay time td(on) VDD=200V, ID=9A RG=25Ω (Note4,5) VGS=10V - 25 - ns Turn-on Rise time tr - 30 - Turn-off Delay time td(off) - 50 - Turn-off Fall time tf - 30 - Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 890 - pF Output Capacitance Coss - 120 - Reverse Transfer Capacitance Crss - 10 - Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 9 A Pulsed Source Current ISP - - 36 Diode Forward Voltage VSD IS=9A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=9A, VGS=0V, dIs/dt=100A/ μs - 350 - ns Reverse Recovery Charge Qrr - 3 - μC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L = 4.5mH, IS=9A, VDD=50V, RG = 25Ω, Starting Tj = 25℃. Note 3) IS ≤9A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj = 25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking |
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