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2N3499 Datasheet(PDF) 2 Page - Semicoa Semiconductor |
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2N3499 Datasheet(HTML) 2 Page - Semicoa Semiconductor |
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2 / 2 page  Data Sheet No. 2N3499 OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 µA Collector-Base Cutoff Current VCB = 50 V Emitter-Base Cutoff Current VEB = 4 V Electrical Characteristics TC = 25 oC unless otherwise specified V(BR)CBO 100 --- V V(BR)CEO 100 --- V V V(BR)EBO 6.0 --- ICBO --- 50 nA IEBO --- 25 nA ON Characteristics Symbol Min Max Unit Forward Current Transfer Ratio IC = 100 µA, VCE = 10 V (pulsed) hFE1 35 --- --- IC = 1.0 mA, VCE = 10 V (pulsed) hFE2 50 --- --- IC = 10 mA, VCE = 10 V (pulsed) hFE3 75 --- --- IC = 150 mA, VCE = 10 V (pulsed) hFE4 100 300 --- IC = 300 mA, VCE = 10 V (pulsed) hFE6 20 --- --- Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA VBE(sat)1 --- 0.8 V dc IC = 300 mA, IB = 300 mA VBE(sat)3 --- 1.4 V dc Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA VCE(sat)1 --- 0.2 V dc IC = 300 mA, IB = 30 mA VCE(sat)3 --- 0.6 V dc Small Signal Characteristics Symbol Min Max Unit Short Circuit Forward Current Transfer Ratio IC = 10 mA, VCE = 10 V, f = 1 kHz Magnitude of Common Emitter, Small Signal, Short Circuit Forward Current Transfer Ratio VCE = 20 V, IC = 20 mA, f = 100 MHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz Noise Figure V CE = 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz Noise Figure V CE = 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz pF CIBO --- 80 pF COBO --- 10 |hFE| 1.5 8.0 --- NF --- 16 dB NF --- 6.0 dB AC hFE 75 375 --- Switching Characteristics Symbol Min Max Unit Saturated Turn On Switching time to 90% IC = 150 mA, IB1 = 15 mA, VEB = 2 V Saturated Turn Off Switching time to 10% IC = 150 mA, IB2 = -IB1 = 15 mA tON --- 115 ns 1150 ns tOFF --- |
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