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7MBR35VW120-50 Datasheet(PDF) 6 Page - Fuji Electric |
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7MBR35VW120-50 Datasheet(HTML) 6 Page - Fuji Electric |
6 / 8 page 6 7MBR35VW120-50 6 IGBT Modules [ Brake ] Tj= 150oC / chip Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage: VCE[V] VGE=15V / chip Collector-Emitter voltage: VCE[V] Capacitance vs. Collector-Emitter voltage (typ.) Gate charge: Qg [nC] VGE=0V, f= 1MHz, Tj= 25oC [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip Collector-Emitter voltage: VCE[V] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Gate - Emitter voltage: VGE [V] [ Brake ] Tj= 25o C / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Collector - Emitter voltage: VCE [V] [ Brake ] Dynamic gate charge (typ.) Vcc=600V, Ic=35A, Tj= 25°C [ Brake ] 0 10 20 30 40 50 0 1 2 3 4 5 VGE=20V 15V 12V 10V 8V 0 10 20 30 40 50 0 1 2 3 4 5 15V 12V 10V 8V VGE=20V 0 10 20 30 40 50 0 1 2 3 4 5 Tj=125°C Tj=25°C 0 2 4 6 8 5 10 15 20 25 Ic=50A Ic=25A Ic=13A 0.0 0.1 1.0 10.0 0 10 20 30 Cies Coes Cres 0 100 200 300 VGE VCE Tj=150°C |
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