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KF8N60P Datasheet(PDF) 2 Page - KEC(Korea Electronics) |
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KF8N60P Datasheet(HTML) 2 Page - KEC(Korea Electronics) |
2 / 7 page 2011. 1. 27 2/7 KF8N60P/F Revision No : 0 ELECTRICAL CHARACTERISTICS (Tc=25 ℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250μA, VGS=0V 600 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250μA, Referenced to 25℃ - 0.65 - V/ ℃ Drain Cut-off Current IDSS VDS=600V, VGS=0V - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA Drain-Source ON Resistance RDS(ON) VGS=10V, ID=4A - 0.85 1.05 Ω Dynamic Total Gate Charge Qg VDS=480V, ID=8A VGS=10V (Note4,5) - 22 - nC Gate-Source Charge Qgs - 5 - Gate-Drain Charge Qgd - 8 - Turn-on Delay time td(on) VDD=300V ID=8A RG=25Ω (Note4,5) - 45 - ns Turn-on Rise time tr - 35 - Turn-off Delay time td(off) - 75 - Turn-off Fall time tf - 30 - Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 1000 - pF Output Capacitance Coss - 115 - Reverse Transfer Capacitance Crss - 8 - Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 8 A Pulsed Source Current ISP - - 32 Diode Forward Voltage VSD IS=8.0A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=8.0A, VGS=0V, dIs/dt=100A/ μs - 400 - ns Reverse Recovery Charge Qrr - 4.1 - μC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =6.7mH, IS=8A, VDD=50V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤8.0A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. 2 PRODUCT NAME LOT NO 1 813 2 KF8N60 F 1 801 2 KF8N60 P 1 Marking |
Similar Part No. - KF8N60P_11 |
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Similar Description - KF8N60P_11 |
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